Enhanced water splitting performance of GaN nanowires fabricated using an...
Separation of hot electrons and holes in Au/LaFeO3 to boost the photocata...
Unique and Tunable Photodetecting Performance for Two-Dimensional Layered...
4-lambda hybrid nGaAsP-Si evanescent laser array with low power consumpti...
25 x 50 Gbps wavelength division multiplexing silicon photonics receiver ...
Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heus...
Cross-dimensional electron-phonon coupling in van der Waals heterostructures
Insights on the Origination of Ambipolar Photocurrent of Ferroelectric an...
Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-...
Two-dimensional hexagonal boron-carbon-nitrogen atomic layers
官方微信
友情鏈接

Epitaxy of III-Nitrides on -Ga2O3 and Its Vertical Structure LEDs

2019-06-28

Authors: Li, WJ; Zhang, X; Meng, RL; Yan, JC; Wang, JX; Li, JM; Wei, TB
MICROMACHINES
Volume: 10 Issue: 5 Published: MAY 2019 Language: English Document type: Review
DOI: 10.3390/mi10050322
Abstract:
beta-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400-320 nm) as well as UVB (320-280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on -Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on -Ga2O3. In this review, with the perspective from materials to devices, we first describe the basic properties, growth method, as well as doping of -Ga2O3, then introduce in detail the progress in growth of GaN on (1 0 0) and (-2 0 1) -Ga2O3, followed by the epitaxy of AlGaN on gallium oxide. Finally, the advances in fabrication and performance of vertical structure LED (VLED) are presented.
全文鏈接:https://www.mdpi.com/2072-666X/10/5/322



關于我們
下載視頻觀看
聯系方式
通信地址

北京市海淀區清華東路甲35號 北京912信箱 (100083)

電話

010-82304210/010-82305052(傳真)

E-mail

[email protected]

交通地圖
版權所有 ? 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明

小青钱APP