Enhance decoding of pre-movement EEG patterns for brain-computer interfaces
The Characteristics and Locking Process of Nonlinear MEMS Gyroscopes
Evaluation of polarization field in InGaN/GaN multiple quantum well struc...
Growth Control of High-Performance InAs/GaSb Type-II Superlattices via Op...
High-Performance Germanium Waveguide Photodetectors on Silicon*
Nanoscale thermal transport across an GaAs/AlGaAs heterostructure interface
Investigation of modulation transfer function in InGaAs photodetector sma...
Seed-mediated growth of heterostructured Cu1.94S-MS (M = Zn, Cd, Mn) and ...
High-performance phosphorene electromechanical actuators
Recent Advances of Two-Dimensional Nanomaterials for Electrochemical Capa...
官方微信
友情鏈接

Epitaxy of III-Nitrides on -Ga2O3 and Its Vertical Structure LEDs

2019-06-28

Authors: Li, WJ; Zhang, X; Meng, RL; Yan, JC; Wang, JX; Li, JM; Wei, TB
MICROMACHINES
Volume: 10 Issue: 5 Published: MAY 2019 Language: English Document type: Review
DOI: 10.3390/mi10050322
Abstract:
beta-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400-320 nm) as well as UVB (320-280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on -Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on -Ga2O3. In this review, with the perspective from materials to devices, we first describe the basic properties, growth method, as well as doping of -Ga2O3, then introduce in detail the progress in growth of GaN on (1 0 0) and (-2 0 1) -Ga2O3, followed by the epitaxy of AlGaN on gallium oxide. Finally, the advances in fabrication and performance of vertical structure LED (VLED) are presented.
全文鏈接:https://www.mdpi.com/2072-666X/10/5/322



關于我們
下載視頻觀看
聯系方式
通信地址

北京市海淀區清華東路甲35號 北京912信箱 (100083)

電話

010-82304210/010-82305052(傳真)

E-mail

[email protected]

交通地圖
版權所有 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明

小青钱APP 山西麻将 大地棋牌苹果版 北京快3一定牛开奖直播 内蒙古十一选五开奖图 广东十一选五开奖直 成年片黄网站色大全免播放器 北京赛车官网视频直播 绿码数字代表啥数字 2018最好玩的棋 陕西麻将手机版下载 山东十一选五开奖视频 玩极速赛车一定会输吗 闲来麻将官网客服 黑龙江22选5开奖结果查询表 资产配置比例 22选5开奖结果